| PART |
Description |
Maker |
| CGY887B CGY887B_1 CGY887B-2015 |
860 MHz/ 27.8 dB gain push-pull amplifier
From old datasheet system
860 MHz, 27.8 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
NXP Semiconductors
Philips Semiconductors
|
| BGD902MI BGD902 BGD902_902MI_6 |
860 MHz, 18.5 dB gain power
From old datasheet system
|
Philips
|
| BGD904MI BGD904 |
860 MHz, 20 dB gain power doubler amplifier
|
Philips
|
| MHW8185 |
19.4 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
MOTOROLA
|
| MHW8242A |
24 dB GAIN 860 MHz 128-CHANNEL CATV AMPLIFIER
|
Motorola, Inc
|
| BGD816L BGD816L_5 BGD816L01 |
860 MHz, 21.5 dB gain power doubler amplifier
From old datasheet system
|
NXP Semiconductors
Philips
|
| CGY887A_5 CGY887A CGY887A-2015 |
From old datasheet system
860 MHz, 25.5 dB gain push-pull amplifier
|
Quanzhou Jinmei Electronic ...
Philips
|
| MHW8205 |
MHW8205 860 MHz, 20.2 dB Gain, 128-Channel CATV Amplifier Module
|
Motorola
|
| BGD902 BGD902112 |
860 MHz, 18.5 dB gain power doubler amplifier
40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
NXP Semiconductors
|
| PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦，860-960兆赫
LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
